Analytical Modeling of IGZO Thin-Film Transistors Based on the Exponential Distribution of Deep and Tail States

被引：23

作者：

Shin, Jae-Heon ^{[1
]}

Hwang, Chi-Sun ^{[1
]}

Cheong, Woo-Seok ^{[1
]}

Park, Sang-Hee Ko ^{[1
]}

Cho, Doo-Hee ^{[1
]}

Ryu, Minki ^{[1
]}

Yoon, Sung-Min ^{[1
]}

Byun, Chun-Won ^{[1
]}

Yang, Shin-Hyuk ^{[1
]}

Chu, Hye Yong ^{[1
]}

Cho, Kyoung Ik ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Convergence Components & Mat Res Lab, Taejon 305700, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2009年 / 54卷 / 01期

关键词：

Oxide TFT; IGZO; Analytical modeling; Deep state; Tail state; Threshold voltage; FIELD-EFFECT TRANSISTORS; ROOM-TEMPERATURE; DEPOSITION; MOBILITY; VOLTAGE; LAYER; TFTS;

D O I：

10.3938/jkps.54.527

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We demonstrate that the current-voltage (I-V) characteristics of In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) can be modeled by using the well-known physical model based on the exponential density of deep and tail states. The threshold voltage and the voltage-dependent field-effect mobility can be determined without ambiguity by using the newly proposed scheme. Both the transfer and the output curves of the device are well reproduced by sing the proposed modeling scheme with the obtained parameters.

引用

页码：527 / 530

页数：4

共 19 条

[1] High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition [J].

Carcia, PF ;

McLean, RS ;

Reilly, MH .

APPLIED PHYSICS LETTERS, 2006, 88 (12)

[2]

CHEONG WS, 2007, MRS07 FALL M G, V3, P3

[3] DC SPICE model for nanocrystalline and microcrystalline silicon TFTs [J].

Dosev, D ;

Ytterdal, T ;

Pallares, J ;

Marsal, LF ;

Iñíguez, B .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (11) :1979-1984

[4] Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature [J].

Fortunato, EMC ;

Barquinha, PMC ;

Pimentel, ACMBG ;

Gonçalves, AMF ;

Marques, AJS ;

Martins, RFP ;

Pereira, LMN .

APPLIED PHYSICS LETTERS, 2004, 85 (13) :2541-2543

[5] Modeling and simulation of polycrystalline ZnO thin-film transistors [J].

Hossain, FM ;

Nishii, J ;

Takagi, S ;

Ohtomo, A ;

Fukumura, T ;

Fujioka, H ;

Ohno, H ;

Koinuma, H ;

Kawasaki, M .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (12) :7768-7777

[6] Threshold voltage, field effect mobility, and gate-to-channel capacitance in polysilicon TFT's [J].

Jacunski, MD ;

Shur, MS ;

Hack, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (09) :1433-1440

[7] Low-voltage zinc-oxide thin-film transistors on a conventional SiO2 gate insulator grown by radio-frequency magnetron sputtering at room temperature [J].

Jeon, Hoonha ;

Noh, Kyoungseok ;

Kim, Do-Hyun ;

Jeon, Minhyon ;

Verma, Ved Prakash ;

Choi, Wonbong ;

Kim, Dongjo ;

Moon, Jooho .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007, 51 (06) :1999-2003

[8]

Jeong J, 2007, ROUTL ADV KOREAN STU, P145

[9]

Kim YH, 2006, J KOREAN PHYS SOC, V49, P1221

[10]

LEE HN, 2007, SID CAL US, P1826

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