Bias dependent intergrain tunneling in lanthanum manganite thin films

被引：3

作者：

Nakano, K ^{[1
]}

Naoe, M ^{[1
]}

Yamasaki, M ^{[1
]}

Choi, KK ^{[1
]}

Taniyama, T ^{[1
]}

Yamazaki, Y ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Innovat & Engn Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1999年 / 35卷 / 05期

关键词：

colossal magnetoresistance(CMR); manganite; tunneling;

D O I：

10.1109/20.801005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bias dependent magnetoresistance of morphologically different La1-xSrxMnO3 (LSMO) films, i.e., epitaxial and polycrystalline films, are investigated. I-V curves exhibit nonlinear behavior indicative of electron tunneling between neighboring grains. Furthermore, two clear minima are observed in the bias dependent magnetoresistance of the polycrystalline film on sapphire substrate in spite of no anomalous behavior in the epitaxial film. The minima appear at the voltages where the I-V curve deviates from the ohmic character. The bias dependent magnetoresistance also increases with increasing voltage. The novel aspects of the bias dependent magnetoresistance are discussed in connection with spin polarized tunneling.

引用

页码：2859 / 2861

页数：3

共 13 条

[1] Substrate-dependent microstructure and magnetoresistance of La-Sr-Mn-O thin films grown by rf sputtering [J].