Tunneling-like magnetoresistance in bicrystal La0.8Sr0.2 MnO3-δ thin films

被引：88

作者：

Steenbeck, K ^{[1
]}

Eick, T ^{[1
]}

Kirsch, K ^{[1
]}

Schmidt, HG ^{[1
]}

Steinbeiss, E ^{[1
]}

机构：

[1] Inst Phys Hochtechnol EV Jena, D-07743 Jena, Germany

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 17期

关键词：

D O I：

10.1063/1.122497

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial ferromagnetic La0.8Sr0.2MnO3-delta films have been sputtered on SrTiO3 bicrystal substrates. Etched patterns crossing the bicrystal grain boundary are compared with identical patterns not crossing it. The films were annealed at different conditions and their magnetoresistance measured as a function of temperature T and of in plane magnetic field H strength and direction. Annealing at 900 degrees C was found to modify the grain boundary and to increase its magnetoresistance. For H = +/-80 Oe parallel to the grain boundary and T = 32 K narrow magnetoresistance peaks of 60% height are measured. They are interpreted in the frame of an in plane magnetotunneling structure. (C) 1998 American Institute of Physics. [S0003-6951(98)04443-X].

引用

收藏

页码：2506 / 2508

页数：3

相关论文

共 10 条

[1] Grain-boundary effects on the magnetoresistance properties of perovskite manganite films [J].

Gupta, A ;

Gong, GQ ;

Xiao, G ;

Duncombe, PR ;

Lecoeur, P ;

Trouilloud, P ;

Wang, YY ;

Dravid, VP ;

Sun, JZ .

PHYSICAL REVIEW B, 1996, 54 (22) :15629-15632

[2] Spin-polarized intergrain tunneling in La-2/Sr-3(1)/3MnO3 [J].

Hwang, HY ;

Cheong, SW ;

Ong, NP ;

Batlogg, B .

PHYSICAL REVIEW LETTERS, 1996, 77 (10) :2041-2044

[3] THOUSANDFOLD CHANGE IN RESISTIVITY IN MAGNETORESISTIVE LA-CA-MN-O FILMS [J].

JIN, S ;

TIEFEL, TH ;

MCCORMACK, M ;

FASTNACHT, RA ;

RAMESH, R ;

CHEN, LH .

SCIENCE, 1994, 264 (5157) :413-415

[4] Large magnetotunneling effect at low magnetic fields in micrometer-scale epitaxial La0.67Sr.033MnO3 tunnel junctions [J].

Lu, Y ;

Li, XW ;

Gong, GQ ;

Xiao, G ;

Gupta, A ;

Lecoeur, P ;

Sun, JZ ;

Wang, YY ;

Dravid, VP .

PHYSICAL REVIEW B, 1996, 54 (12) :R8357-R8360

[5] Large low-field magnetoresistance in La0.7Ca0.3MnO3 induced by artificial grain boundaries [J].

Mathur, ND ;

Burnell, G ;

Isaac, SP ;

Jackson, TJ ;

Teo, BS ;

MacManusDriscoll, JL ;

Cohen, LF ;

Evetts, JE ;

Blamire, MG .

NATURE, 1997, 387 (6630) :266-268

[6] MAGNETORESISTANCE AND KERR EFFECT INVESTIGATIONS OF CO/CU MULTILAYERS WITH WEDGE-SHAPED CU LAYERS [J].

MATTHEIS, R ;

ANDRA, W ;

FRITZSCH, L ;

HUBERT, A ;

RUHRIG, M ;

THRUM, F .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1993, 121 (1-3) :424-428

[7]

NASSAER J, 1998, MAT RES SOC S P, V494

[8] Influence of a 36.8 degrees grain boundary on the magnetoresistance of La0.8Sr0.2MnO3-delta single crystal films [J].

Steenbeck, K ;

Eick, T ;

Kirsch, K ;

ODonnell, K ;

Steinbeiss, E .

APPLIED PHYSICS LETTERS, 1997, 71 (07) :968-970

[9] Temperature dependent, non-ohmic magnetoresistance in doped perovskite manganate trilayer junctions [J].

Sun, JZ ;

KrusinElbaum, L ;

Duncombe, PR ;

Gupta, A ;

Laibowitz, RB .

APPLIED PHYSICS LETTERS, 1997, 70 (13) :1769-1771

[10] Observation of large low-field magnetoresistance in trilayer perpendicular transport devices made using doped manganate perovskites [J].

Sun, JZ ;

Gallagher, WJ ;

Duncombe, PR ;

KrusinElbaum, L ;

Altman, RA ;

Gupta, A ;

Lu, Y ;

Gong, GQ ;

Xiao, G .

APPLIED PHYSICS LETTERS, 1996, 69 (21) :3266-3268