A printed and flexible field-effect transistor device with nanoscale zinc oxide as active semiconductor material

被引：146

作者：

Schneider, Joerg J. ^{[1
]}

Hoffmann, Rudolf C. ^{[1
]}

Engstler, Joerg ^{[1
]}

Soffke, Oliver ^{[2
]}

Jaegermann, Wolfram ^{[3
]}

Issanin, Alexander ^{[3
]}

Klyszcz, Andreas ^{[4
]}

机构：

[1] Tech Univ Darmstadt, Dept Chem, Inorgan & Mesoscop Chem Grp, D-64287 Darmstadt, Germany

[2] Tech Univ Darmstadt, Dept Elect Engn & Informat Technol Microelect Sys, D-64283 Darmstadt, Germany

[3] Tech Univ Darmstadt, Dept Mat & Geosci, Surface Sci Grp, D-64287 Darmstadt, Germany

[4] Merck KGaA, D-64293 Darmstadt, Germany

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 18期

关键词：

D O I：

10.1002/adma.200800819

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A family of single-source precursors for low temperature processing of uniform, transparent, and adherent ZnO thin films on various substrates is studied. They decompose cleanly under very mild processing conditions of 150 degrees C. The resulting ZnO thin films exhibit promising semiconducting properties when printed in a field-effect transistor (FET) device structure. This class of precursor compounds is compatible with existing printing technologies and allows printing of semiconductors on flexible polymer substrates under mild conditions.

引用

页码：3383 / +

页数：6

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