Stable, solution-processed, high-mobility ZnO thin-film transistors

被引：422

作者：

Ong, Beng S.

Li, Chensha

Li, Yuning

Wu, Yiliang

Loutfy, Rafik

机构：

[1] Xerox Res Ctr Canada Ltd, Mat Design & Integrat Lab, Mississauga, ON L5K 2L1, Canada

[2] McMaster Univ, Dept Chem Engn, Hamilton, ON L8S 4L7, Canada

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2007年 / 129卷 / 10期

关键词：

D O I：

10.1021/ja068876e

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A stable, high-mobility ZnO thin-film semiconductor was fabricated by thermal treatment of a solution-deposited thin film from a solution of Zn(OAc)(2)/2-ethanolamine in methoxyethanol. This ZnO thin-film semiconductor was composed of closely packed ZnO single crystals (similar to 30 to 50 nm) having a hexagonal structure assuming a preferred orientation with its c-axis perpendicular to the substrate. Field-effect mobility of 5-6 cm(2) V-1 s(-1) and current on-to-off ratio of 10(5)-10(6) were demonstrated with this ZnO thin-film semiconductor in thin-film transistors.

引用

页码：2750 / +

页数：3

共 14 条

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[2]

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