Spin-coated zinc oxide transparent transistors

被引：262

作者：

Norris, BJ

Anderson, J

Wager, JF

Keszler, DA

机构：

[1] Oregon State Univ, Sch Elect Engn & Comp Sci, Corvallis, OR 97331 USA

[2] Oregon State Univ, Dept Chem, Corvallis, OR 97331 USA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2003年 / 36卷 / 20期

关键词：

THIN-FILM TRANSISTORS; ZNO FILMS; PHOTOCONDUCTIVITY; ORIENTATION; MOBILITY; ACETATE;

D O I：

10.1088/0022-3727/36/20/L02

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A ZnO transparent thin-film transistor (TTFT) with a channel layer formed via spin-coating deposition is demonstrated. The TTFT is highly transparent and exhibits n-channel, enhancement-mode behaviour with a channel mobility as large as 0.20 cm(2) V-1 s(-1) and a drain current on-to-off ratio of nearly 10(7).

引用

收藏

页码：L105 / L107

页数：3

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