Spin-coated zinc oxide transparent transistors

被引:262
作者
Norris, BJ
Anderson, J
Wager, JF
Keszler, DA
机构
[1] Oregon State Univ, Sch Elect Engn & Comp Sci, Corvallis, OR 97331 USA
[2] Oregon State Univ, Dept Chem, Corvallis, OR 97331 USA
关键词
THIN-FILM TRANSISTORS; ZNO FILMS; PHOTOCONDUCTIVITY; ORIENTATION; MOBILITY; ACETATE;
D O I
10.1088/0022-3727/36/20/L02
中图分类号
O59 [应用物理学];
学科分类号
摘要
A ZnO transparent thin-film transistor (TTFT) with a channel layer formed via spin-coating deposition is demonstrated. The TTFT is highly transparent and exhibits n-channel, enhancement-mode behaviour with a channel mobility as large as 0.20 cm(2) V-1 s(-1) and a drain current on-to-off ratio of nearly 10(7).
引用
收藏
页码:L105 / L107
页数:3
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