Energy Gaps in Etched Graphene Nanoribbons

被引：336

作者：

Stampfer, C. ^{[1
]}

Guettinger, J. ^{[1
]}

Hellmueller, S. ^{[1
]}

Molitor, F. ^{[1
]}

Ensslin, K. ^{[1
]}

Ihn, T. ^{[1
]}

机构：

[1] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 102卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.102.056403

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Transport measurements on an etched graphene nanoribbon are presented. It is shown that two distinct voltage scales can be experimentally extracted that characterize the parameter region of suppressed conductance at low charge density in the ribbon. One of them is related to the charging energy of localized states, the other to the strength of the disorder potential. The lever arms of gates vary by up to 30% for different localized states which must therefore be spread in position along the ribbon. A single-electron transistor is used to prove the addition of individual electrons to the localized states. In our sample the characteristic charging energy is of the order of 10 meV, the characteristic strength of the disorder potential of the order of 100 meV.

引用

页数：4

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