Growth control and properties of microcrystallized silicon films deposited by hydrogen plasma sputtering

被引：10

作者：

Achiq, A ^{[1
]}

Rizk, R ^{[1
]}

Madelon, R ^{[1
]}

Gourbilleau, F ^{[1
]}

Voivenel, P ^{[1
]}

机构：

[1] ISMRA UNIV,URA CNRS 1317,LERMAT,F-14050 CAEN,FRANCE

来源：

THIN SOLID FILMS | 1997年 / 296卷 / 1-2期

关键词：

growth control; hydrogen plasma sputtering; optical properties; electrical properties;

D O I：

10.1016/S0040-6090(96)09385-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, optical and electrical properties have been correlated to the degree of crystallization of silicon films deposited by sputtering in a pure H-2 plasma at various substrate temperatures, T-s. On increasing T-s from 50 degrees C to 250 degrees C, the average grain size is found to grow from about 5 nm to some tens of nanometers, with a concomitant decrease of the optical band gap from 2.40 eV to 1.95 eV. The detection of photoluminescence emission in the visible region for the lowest T-s seems to originate from the quantum confinement mechanism occurring in nanosized grains, whereas the conductivity increases by more than six orders of magnitude when T-s is increased from 50 degrees C to 250 degrees C. (C) 1997 Elsevier Science S.A.

引用

页码：15 / 18

页数：4

共 18 条

[1] IN-SITU REAL-TIME STUDIES OF THE FORMATION OF POLYCRYSTALLINE SILICON FILMS ON GLASS GROWN BY A LAYER-BY-LAYER TECHNIQUE [J].