Electrical characterization of organic light-emitting diodes using dipotassium phthalate as n-type dopant

被引：17

作者：

Ho, Meng-Huan ^{[2
]}

Hsieh, Ming-Ta ^{[1
]}

Chen, Teng-Ming ^{[2
]}

Chen, Jenn-Fang ^{[1
]}

Hwang, Shiao-Wen ^{[3
]}

Chen, Chin H. ^{[3
]}

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Dept Appl Chem, Hsinchu 300, Taiwan

[3] Natl Chiao Tung Univ, Display Inst, Microelect & Informat Syst Res Ctr, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 08期

关键词：

D O I：

10.1063/1.2976139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An efficient n-doped electron transport layer composed of 4,7-diphenyl-1,10-phenanthroline (BPhen) and dipotassium phthalate (PAK2) has been developed. By temperature-dependent admittance spectroscopy, the incorporation of PAK2 into BPhen is found to raise the Fermi level from 1.7 eV to only around 0.5 eV below BPhen's lowest unoccupied molecular orbital, which further enhances the efficiency of electron injection from an A1 cathode. When this n-doped layer is adopted in an organic light-emitting diode device, the green fluorescent 10-(2-benzothiazolyl)-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H, 5H, 11H-benzo[l]-pyrano[6,7,8-ij]quinolizin-11-one doped device can achieve a current efficiency of 16 cd/A and a power efficiency of 10.9 lm/W at 1000 cd/m(2). (C) 2008 American Institute of Physics.

引用

页数：3

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