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Interfacial and annealing effects on magnetic properties of CoFeB thin films
被引:82
作者:

Wang, Yung-Hung
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Elect Res & Serv Org, Ind Technol Res Inst, Hsinchu 310, Taiwan Elect Res & Serv Org, Ind Technol Res Inst, Hsinchu 310, Taiwan

Chen, Wei-Chuan
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机构: Elect Res & Serv Org, Ind Technol Res Inst, Hsinchu 310, Taiwan

Yang, Shan-Yi
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机构: Elect Res & Serv Org, Ind Technol Res Inst, Hsinchu 310, Taiwan

Shen, Kuei-Hung
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机构: Elect Res & Serv Org, Ind Technol Res Inst, Hsinchu 310, Taiwan

Park, Chando
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机构: Elect Res & Serv Org, Ind Technol Res Inst, Hsinchu 310, Taiwan

Kao, Ming-Jer
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机构: Elect Res & Serv Org, Ind Technol Res Inst, Hsinchu 310, Taiwan

Tsai, Ming-Jinn
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机构: Elect Res & Serv Org, Ind Technol Res Inst, Hsinchu 310, Taiwan
机构:
[1] Elect Res & Serv Org, Ind Technol Res Inst, Hsinchu 310, Taiwan
[2] Carnegie Mellon Univ, Ctr Data Storage Syst, Pittsburgh, PA 15213 USA
关键词:
D O I:
10.1063/1.2176108
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
The interfacial and annealing effects on magnetic properties of CoFeB thin films with Ta and Ru interfaces were investigated. It is found that the thickness of magnetically dead layer of as-deposited CoFeB film strongly depends on the interfaces. After annealing above 150 degrees C boron atoms seem to diffuse out of CoFeB film and the effective saturation magnetization of CoFeB film increases with annealing temperature and annealing time. In addition, CoFeB film with Ta interfaces remains amorphous while that with Ru interfaces starts to crystallize during the annealing above 250 degrees C. Furthermore, the annealing-induced anisotropy field of CoFeB film can be modified by using different seed and capping materials. (C) 2006 American Institute of Physics.
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