Remote plasma nitridation, deuterium anneal and pocket implant effects on NMOS hot carrier reliability

被引：1

作者：

Aur, S ^{[1
]}

Grider, T ^{[1
]}

McNeil, V ^{[1
]}

Holloway, T ^{[1
]}

Eklund, R ^{[1
]}

机构：

[1] Texas Instruments Inc, Silicon Technol Dev, Dallas, TX 75265 USA

来源：

MICROELECTRONICS RELIABILITY | 1999年 / 39卷 / 05期

关键词：

D O I：

10.1016/S0026-2714(99)00033-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

There are several advanced processes which are being actively studied as candidates for sub-0.25 mu m technology. This paper studies the effects on NMOS hot carrier reliability from remote plasma nitrided oxide (RPNO), deuterium anneal and pocket implant. It is found that RPNO will not affect the SiO2/Si interface. The hot carrier reliability is better for the same device channel current. This is due to making the effective oxide thickness thinner and achieving the same drive current with longer channel length. The deuterium anneal can improve the hot carrier reliability, even with nitride sidewall, if proper annealing is done. While the pocket implant can reduce short channel effects, the hot carrier lifetime is degraded unless optimization is done. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：673 / 679

页数：7

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