Structures of AlN/VN superlattices with different AlN layer thicknesses

被引:39
作者
Li, Q [1 ]
Kim, IW
Barnett, SA
Marks, LD
机构
[1] Chinese Univ Hong Kong, Dept Phys, Shatin, Hong Kong, Peoples R China
[2] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
基金
美国国家科学基金会;
关键词
D O I
10.1557/JMR.2002.0181
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
AIN/VN superlattices with different periods were studied using x-ray diffraction and transmission electron microscopy (TEM). A phase trans format ion of the AIN from an epitaxially stabilized rock-salt structure to a hexagonal wurtzite structure was observed for an AIN layer thickness greater than 4 rim. A structural model is proposed on the basis of TEM results for the orientation of the transformed phase. The VN layer grown on top of the hexagonal AIN was observed to be reoriented compared to that in the stabilized B1-AIN/VN. The VN nucleated by taking the w-AIN(002) plane as its (111) plane instead of the (002) plane.
引用
收藏
页码:1224 / 1231
页数:8
相关论文
共 12 条
[1]   OPTICAL AND STRUCTURAL-PROPERTIES OF III-V NITRIDES UNDER PRESSURE [J].
CHRISTENSEN, NE ;
GORCZYCA, I .
PHYSICAL REVIEW B, 1994, 50 (07) :4397-4415
[2]  
EDINGTON JW, 1975, MONOGRAPHS PRACTICAL, V2
[3]  
Jena A. K., 1992, Phase Transformations in Materials
[4]   Stabilization of zinc-blende cubic AlN in AlN/W superlattices [J].
Kim, IW ;
Madan, A ;
Guruz, MW ;
Dravid, VP ;
Barnett, SA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2001, 19 (05) :2069-2073
[5]   Critical thickness for transformation of epitaxially stabilized cubic AlN in superlattices [J].
Kim, IW ;
Li, Q ;
Marks, LD ;
Barnett, SA .
APPLIED PHYSICS LETTERS, 2001, 78 (07) :892-894
[6]   SELF-CONSISTENT EQUATIONS INCLUDING EXCHANGE AND CORRELATION EFFECTS [J].
KOHN, W ;
SHAM, LJ .
PHYSICAL REVIEW, 1965, 140 (4A) :1133-&
[7]   Stabilization of cubic AlN in epitaxial AlN/TiN superlattices [J].
Madan, A ;
Kim, IW ;
Cheng, SC ;
Yashar, P ;
Dravid, VP ;
Barnett, SA .
PHYSICAL REVIEW LETTERS, 1997, 78 (09) :1743-1746
[8]  
MADAN A, 1996, UNPUB
[9]  
MIRKARIMI PB, 1992, J VAC SCI TECHNOL A, V10, P1618
[10]   CRYSTAL-STRUCTURE REFINEMENT OF AIN AND GAN [J].
SCHULZ, H ;
THIEMANN, KH .
SOLID STATE COMMUNICATIONS, 1977, 23 (11) :815-819