Simulation of terahertz generation at semiconductor surfaces

被引：305

作者：

Johnston, MB ^{[1
]}

Whittaker, DM ^{[1
]}

Corchia, A ^{[1
]}

Davies, AG ^{[1
]}

Linfield, EH ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

PHYSICAL REVIEW B | 2002年 / 65卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.65.165301

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A three-dimensional semiclassical Monte Carlo model is presented to describe fast carrier dynamics in semiconductors after photoexcitation. Far-field terahertz (THz) radiation patterns are calculated for both InAs and GaAs with, and without, application of external magnetic fields. This analysis distinguishes between surface depletion field and photo-Dember mechanisms for generating THz radiation. The theoretical model reproduces experimental data from GaAs and InAs, and demonstrates that a magnetic field enhances THz emission by rotating the emitting dipole with respect to the sample surface, leading to an increased coupling of radiation through the surface.

引用

页数：8

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