Kinetic effects on the size homogeneity of Stranski-Krastanow islands

被引：12

作者：

Johansson, J ^{[1
]}

Seifert, W ^{[1
]}

机构：

[1] Lund Univ, S-22100 Lund, Sweden

来源：

APPLIED SURFACE SCIENCE | 1999年 / 148卷 / 1-2期

关键词：

metal organic vapor phase epitaxy; Stranski-Krastanow growth; self-assembling; quantum dots;

D O I：

10.1016/S0169-4332(99)00127-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this study we present results concerning the size (height) homogeneity of self-assembled quantum dots grown in the Stranski-Krastanow growth mode for different deposition conditions. 3.5 ML InP was deposited on a GaP-stabilized GaAs substrate by metal organic vapor phase epitaxy for varying temperatures, 580-640 degrees C, and varying deposition rates, 0.5-3.5 ML/s. The average height decreases for increasing deposition rate and decreasing temperature. The width of the height distribution decreases with decreasing temperature and shows a non-monotonic behaviour with a minimum as a function of the deposition rate. (C) 1999 Elsevier Science B.V. All rights reserved.

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收藏

页码：86 / 91

页数：6

相关论文

共 28 条

[11] Manipulations of size and density of self-assembled quantum dots grown by MOVPE [J].

Johansson, J ;

Carlsson, N ;

Seifert, W .

PHYSICA E, 1998, 2 (1-4) :667-671

[12] Size reduction of self assembled quantum dots by annealing [J].

Johansson, J ;

Seifert, W ;

Zwiller, V ;

Junno, T ;

Samuelson, L .

APPLIED SURFACE SCIENCE, 1998, 134 (1-4) :47-52

[13] Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes [J].

Medeiros-Ribeiro, G ;

Bratkovski, AM ;

Kamins, TI ;

Ohlberg, DAA ;

Williams, RS .

SCIENCE, 1998, 279 (5349) :353-355

[14] Self-organized growth of quantum-dot structures [J].

Notzel, R .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (10) :1365-1379

[15] A MODEL FOR STRAIN-INDUCED ROUGHENING AND COHERENT ISLAND GROWTH [J].

ORR, BG ;

KESSLER, D ;

SNYDER, CW ;

SANDER, L .

EUROPHYSICS LETTERS, 1992, 19 (01) :33-38

[16] Shape and stability of quantum dots [J].

Pehlke, E ;

Moll, N ;

Kley, A ;

Scheffler, M .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1997, 65 (06) :525-534

[17] MBE AND MOCVD GROWTH AND PROPERTIES OF SELF-ASSEMBLING QUANTUM-DOT ARRAYS IN III-V SEMICONDUCTOR STRUCTURES [J].

PETROFF, PM ;

DENBAARS, SP .

SUPERLATTICES AND MICROSTRUCTURES, 1994, 15 (01) :15-21

[18] RELATIONSHIP BETWEEN SELF-ORGANIZATION AND SIZE OF INAS ISLANDS ON INP(001) GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].

PONCHET, A ;

LECORRE, A ;

LHARIDON, H ;

LAMBERT, B ;

SALAUN, S .

APPLIED PHYSICS LETTERS, 1995, 67 (13) :1850-1852

[19] Coarsening of self-assembled Ge quantum dots on Si(001) [J].

Ross, FM ;

Tersoff, J ;

Tromp, RM .

PHYSICAL REVIEW LETTERS, 1998, 80 (05) :984-987

[20] In-situ growth of quantum dot structures by the Stranski-Krastanow growth mode [J].

Seifert, W ;

Carlsson, N ;

Miller, M ;

Pistol, ME ;

Samuelson, L ;

Wallenberg, LR .

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1996, 33 (04) :423-471