High speed hybrid silicon evanescent Mach-Zehnder modulator and switch

被引：39

作者：

Chen, Hui-Wen ^{[1
]}

Kuo, Ying-Hao ^{[1
]}

Bowers, John E. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

OPTICS EXPRESS | 2008年 / 16卷 / 25期

关键词：

Gallium alloys - Semiconductor alloys - Semiconductor quantum wells - Silicon - Aluminum alloys - Light modulation - Optical fiber communication;

D O I：

10.1364/OE.16.020571

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate the first high speed silicon evanescent Mach Zehnder modulator and switch. The modulator utilizes carrier depletion within AlGaInAs quantum wells to obtain V(pi) L of 2 V-mm and clear open eye at 10 Gb/s. The switch exhibits a power penalty of 0.5 dB for all ports at 10 Gb/s modulation. (C) 2008 Optical Society of America

引用

页码：20571 / 20576

页数：6

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