Hybrid AlGaInAs-silicon evanescent preamplifier and photodetector

被引:84
作者
Park, Hyundai [1 ]
Kuo, Ying-Hao
Fang, Alexander W.
Jones, Richard
Cohen, Oded
Paniccia, Mario J.
Bowers, John E.
机构
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Intel Corp, Santa Clara, CA 95054 USA
[3] Intel Corp, IL-91031 Jerusalem, Israel
关键词
D O I
10.1364/OE.15.013539
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report the integration of a hybrid silicon evanescent waveguide photodetector with a hybrid silicon evanescent optical amplifier. The device operates at 1550 nm with a responsivity of 5.7 A/W and a receiver sensitivity of -17.5 dBm at 2.5 Gb/s. The transition between the passive silicon waveguide and the hybrid waveguide of the amplifier is tapered to increase coupling efficiency and to minimize reflections. (C) 2007 Optical Society of America.
引用
收藏
页码:13539 / 13546
页数:8
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