A hybrid AlGaInAs-silicon evanescent amplifier

被引：118

作者：

Park, Hyundai ^{[1
]}

Fang, Alexander W.

Cohen, Oded

Jones, Richard

Paniccia, Mario J.

Bowers, John E.

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Intel Corp, Photon Technol Lab, IL-91031 Jerusalem, Israel

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2007年 / 19卷 / 2-4期

关键词：

semiconductor optical amplifiers; siliconon-insulator (SOI) technology;

D O I：

10.1109/LPT.2007.891188

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a hybrid AlGaInAs-silicon evanescent amplifier incorporating a silicon waveguide with a III-V gain medium. The optical mode of the hybrid amplifier is mostly confined to the silicon waveguide and evanescently coupled to the AlGaInAs quantum-well (QW) region where optical gain is provided by electrical current injection. These two different material systems are bonded by low-temperature oxygen plasma assisted wafer bonding at 300 degrees C. The fabricated device shows 13 dB of maximum chip gain with 11 dBm of output saturation power. Evanescent coupling allows a lower active region confinement factor to provide a higher saturation output power than amplifiers with centered QWs, which is important for applications that require linear amplification.

引用

页码：230 / 232

页数：3

共 8 条

[1]

Agrawal G.P., 2002, FIBER OPTIC COMMUNIC

[2] Theory and measurement techniques for the noise figure of optical amplifiers [J].

Baney, DM ;

Gallion, P ;

Tucker, RS .

OPTICAL FIBER TECHNOLOGY, 2000, 6 (02) :122-154

[3] Electrically pumped hybrid AlGaInAs-silicon evanescent laser [J].

Fang, Alexander W. ;

Park, Hyundai ;

Cohen, Oded ;

Jones, Richard ;

Paniccia, Mario J. ;

Bowers, John E. .

OPTICS EXPRESS, 2006, 14 (20) :9203-9210

[4] Net continuous wave optical gain in a low loss silicon-on-insulator waveguide by stimulated Raman scattering [J].

Jones, R ;

Rong, HS ;

Liu, AS ;

Fang, AW ;

Paniccia, MJ ;

Hak, D ;

Cohen, O .

OPTICS EXPRESS, 2005, 13 (02) :519-525

[5] Superlattice barrier 1528-nm vertical-cavity laser with 85 °C continuous-wave operation [J].

Karim, A ;

Black, KA ;

Abraham, P ;

Lofgreen, D ;

Chiu, YJ ;

Piprek, J ;

Bowers, JE .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (11) :1438-1440

[6] Plasma-assisted InP-to-Si low temperature wafer bonding [J].

Pasquariello, D ;

Hjort, K .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (01) :118-131

[7] Multiple-chip precise self-aligned assembly for hybrid integrated optical modules using Au-Sn solder bumps [J].

Sasaki, JI ;

Itoh, M ;

Tamanuki, T ;

Hatakeyama, H ;

Kitamura, S ;

Shimoda, T ;

Kato, T .

IEEE TRANSACTIONS ON ADVANCED PACKAGING, 2001, 24 (04) :569-575

[8] High saturation power and high gain integrated photoreceivers [J].

Tauke-Pedretti, A ;

Dummer, M ;

Barton, JS ;

Sysak, MN ;

Raring, JW ;

Coldren, LA .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (10) :2167-2169

← 1 →