A hybrid AlGaInAs-silicon evanescent waveguide photodetector

被引：139

作者：

Park, Hyundai ^{[1
]}

Fang, Alexander W.

Jones, Richard

Cohen, Oded

Raday, Omri

Sysak, Matthew N.

Paniccia, Mario J.

Bowers, John E.

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Intel Corp, Santa Clara, CA 95054 USA

[3] Intel Corp, IL-91031 Jerusalem, Israel

来源：

OPTICS EXPRESS | 2007年 / 15卷 / 10期

关键词：

D O I：

10.1364/OE.15.006044

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report a waveguide photodetector utilizing a hybrid waveguide structure consisting of A1GaInAs quantum wells bonded to a silicon waveguide. The light in the hybrid waveguide is absorbed by the A1GaInAs quantum wells under reverse bias. The photodetector has a fiber coupled responsivity of 0.31 A/W with an internal quantum efficiency of 90 % over the 1.5 mu m wavelength range. This photodetector structure can be integrated with silicon evanescent lasers for power monitors or integrated with silicon evanescent amplifiers for preamplified receivers. (C) 2007 Optical Society of America

引用

页码：6044 / 6052

页数：9

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