Improved electron-beam/deep-uitraviolet intralevel mix-and-match lithography with 100 nm resolution

被引：6

作者：

Magoshi, S ^{[1
]}

Niiyama, H ^{[1
]}

Sato, S ^{[1
]}

Kato, Y ^{[1
]}

Watanabe, Y ^{[1
]}

Shibata, T ^{[1
]}

Ito, M ^{[1
]}

Ando, A ^{[1
]}

Nakasugi, T ^{[1
]}

Sugihara, K ^{[1
]}

Okumura, K ^{[1
]}

机构：

[1] Toshiba Corp, Microelect Engn Lab, ULSI Proc Engn Lab, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 4A期

关键词：

intralevel mix-and-match lithography; electron-beam direct writing; throughput; DUV biased exposure; overlay accuracy; DUV scanning system;

D O I：

10.1143/JJAP.38.2169

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a novel electron-beam (e-beam)/deep-ultraviolet (DUV) intralevel mix-and-match (ILM&M) lithography as a production-viable technology. The main feature of the ILM&M lithography is its use of a DUV biased exposure method for increased throughput and a combination of a variably shaped e-beam/character projection writer with a step-and-repeat DUV scanning system for accurate intralevel butting between e-beam and DUV patterns. It was demonstrated that the throughput of-beam writing in the ILM&M lithography could reach about three times that of e-beam lithography, and that an intralevel butting accuracy of less than 50 nm could be achieved. The proposed ILM&M has been successfully applied to the development and early production of leading edge devices at our laboratory.

引用

页码：2169 / 2172

页数：4

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