Linnik microscope imaging of integrated circuit structures

被引：52

作者：

Gale, DM ^{[1
]}

Pether, MI ^{[1
]}

Dainty, JC ^{[1
]}

机构：

[1] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,DEPT PHYS,OPT SECT,LONDON SW7 2BZ,ENGLAND

来源：

APPLIED OPTICS | 1996年 / 35卷 / 01期

关键词：

interference microscopy; waveguide imaging theory; integrated circuit metrology; profilometry;

D O I：

10.1364/AO.35.000131

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Experimental one-dimensional intensity and phase images of thick (>200 nm) oxide lines on silicon are presented together with profiles predicted from the waveguide model. Experimental results were obtained with a purpose-built Linnik interference microscope that makes use of phase-shifting interferometry for interferogram analysis. Profiles have been obtained for both TE and TM polarizations for a wide range of focal positions and in both bright-field [type 1(a)] scanning and confocal modes of microscope operation. The results show extremely good agreement despite several simplifying assumptions incorporated into the theoretical model to reduce computing times. (C) 1996 Optical Society of America

引用

页码：131 / 148

页数：18

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