Bulk Sn1-xMnxO2 magnetic semiconductors without room-temperature ferromagnetism

被引:27
作者
Gao, K. H.
Li, Z. Q. [1 ]
Liu, X. J.
Song, W.
Liu, H.
Jiang, E. Y.
机构
[1] Tianjin Univ, Fac Sci, Inst Adv Mat Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R China
[2] Tianjin Univ, Anal Ctr, Tianjin 300072, Peoples R China
[3] Nankai Univ, Coll Informat Tech Sci, Tianjin 300071, Peoples R China
基金
中国国家自然科学基金;
关键词
diluted magnetic semiconductor; room temperature ferromagnetisin; solid state reaction;
D O I
10.1016/j.ssc.2006.02.032
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Polycrystalline Sn1-xMnxO2 (0 <= x <= 0.05) diluted magnetic semiconductors were prepared by solid-state reaction method and their structural and magnetic properties had been investigated systematically. The three Mn-doped samples (x = 0.01, 0.03, 0.05) undergo paramagnetic to ferrornagnetic phase transitions upon cooling, but their Curie temperatures are far lower than room temperature. The magnetization cannot be attributed to any identified impurity phase. It is also found that the magnetization increases with increasing Mn doping, while the ratio of the Mn ions contributing to ferrornagnetic ordering to the total Mn ions decreases. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码:175 / 178
页数:4
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