Rutile-type oxide-diluted magnetic semiconductor:: Mn-doped SnO2

被引：198

作者：

Kimura, H ^{[1
]}

Fukumura, T

Kawasaki, M

Inaba, K

Hasegawa, T

Koinuma, H

机构：

[1] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Yokohama, Kanagawa 2268502, Japan

[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[3] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan

[4] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Yokohama, Kanagawa 2268503, Japan

[5] COMET, Tsukuba, Ibaraki 3050044, Japan

[6] Japan Sci & Technol Corp, CREST, Tokyo 1690072, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 01期

关键词：

D O I：

10.1063/1.1430856

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial films of an oxide-diluted magnetic semiconductor with rutile structure, Mn-doped SnO2, have been fabricated by pulsed-laser deposition. As the Mn content increases, systematic changes in lattice constants and in-gap absorption are observed. Magnetization measurements show almost paramagnetic behavior. The injection of n-type carrier over 10(20) cm(-3) is achieved by Sb doping. A Sn0.95Mn0.05O2:Sb film shows giant positive magnetoresistance as large as 60% at 5 K. (C) 2002 American Institute of Physics.

引用

页码：94 / 96

页数：3

共 17 条

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