Large pairing Jahn-Teller distortions around divacancies in crystalline silicon

被引:49
作者
Ögüt, S [1 ]
Chelikowsky, JR [1 ]
机构
[1] Univ Minnesota, Dept Chem Engn & Mat Sci, Minnesota Supercomp Inst, Minneapolis, MN 55455 USA
关键词
D O I
10.1103/PhysRevLett.83.3852
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Ab initio atomic and electronic structures of neutral (V-2(0)) and charged (V-2(+), V-2(-), V-2(2-)) Si divacancies are investigated using bulk-terminated clusters with up to approximate to 320 Si atoms. For the first time, the relaxed structures for V-2(+), V-2(0), and V-2(-) are found to exhibit large pairing Jahn-Teller distortions consistent with electron paramagnetic resonance experiments. Atomic relaxations, Jahn-Teller and relaxation energies, and hyperfine parameters are calculated for various charge states and compared with available experimental data. The cluster size and the anisotropic nature of the relaxations play key roles in establishing the stability of the structures with Large pairing distortions.
引用
收藏
页码:3852 / 3855
页数:4
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