RESONANT BONDS IN SYMMETRY-LOWERING DISTORTION AROUND A SI DIVACANCY

被引：50

作者：

SAITO, M ^{[1
]}

OSHIYAMA, A ^{[1
]}

机构：

[1] NEC CORP LTD,FUNDAMENTAL RES LABS,TSUKUBA 305,JAPAN

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 73卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.73.866

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We propose a novel Jahn-Teller distortion for the negatively charged divacancy (V2-) in Si on the basis of the first-principles total-energy calculations. This distortion is inverse to the conventional pairing Jahn-Teller distortion and the origin of its energy gain is newly discovered resonant bonds. The proposed model successfully reproduces results of electron spin resonance.

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收藏

页码：866 / 869

页数：4

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