Superconductivity and bandwidth-controlled Mott metal-insulator transition in 1T-TaS2-xSex

被引:70
作者
Ang, R. [1 ]
Miyata, Y. [2 ]
Ieki, E. [2 ]
Nakayama, K. [2 ]
Sato, T. [2 ]
Liu, Y. [3 ]
Lu, W. J. [3 ]
Sun, Y. P. [3 ,4 ]
Takahashi, T. [1 ,2 ]
机构
[1] Tohoku Univ, Adv Inst Mat Res, WPI Res Ctr, Sendai, Miyagi 9808577, Japan
[2] Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578, Japan
[3] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
[4] Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Peoples R China
来源
PHYSICAL REVIEW B | 2013年 / 88卷 / 11期
基金
日本科学技术振兴机构; 中国国家自然科学基金; 日本学术振兴会;
关键词
CHARGE-DENSITY WAVES; SCANNING-TUNNELING-MICROSCOPY; BAND STRUCTURES; DOPED; 1T-TAS2; FERMI-SURFACE; PHASES; ELECTRONS; PURE; TAS2; 1T;
D O I
10.1103/PhysRevB.88.115145
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have performed high-resolution angle-resolved photoemission spectroscopy (ARPES) of layered chalcogenide 1T-TaS2-xSex to elucidate the electronic states especially relevant to the occurrence of superconductivity. We found a direct evidence for a Ta-5d-derived electron pocket associated with the superconductivity, which is fragile against a Mott-gap opening observed in the insulating ground state for S-rich samples. In particular, a strong electron-electron interaction-induced Mott gap driven by a Ta 5d orbital also exists in the metallic ground state for Se-rich samples, while finite ARPES intensity near the Fermi level likely originating from a Se 4p orbital survives, indicative of the orbital-selective nature of the Mott transition. Present results suggest that effective electron correlation and p-d hybridization play a crucial role to tune the superconductivity and Mott metal-insulator transition.
引用
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页数:5
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