Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical properties

被引：30

作者：

Leon, R

Chaparro, S

Johnson, SR

Navarro, C

Jin, X

Zhang, YH

Siegert, J

Marcinkevicius, S

Liao, XZ

Zou, J

机构：

[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

[3] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[4] Royal Inst Technol, Dept Microelect & Informat Technol, Opt Sect, S-10044 Stockholm, Sweden

[5] Univ Sydney, Australian Key Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 09期

关键词：

D O I：

10.1063/1.1467963

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Misfit dislocations were used to modify the surface morphology and to attain spatial ordering of quantum dots (QDs) by molecular beam epitaxy. Effects of anneal time and temperature on strain-relaxed InxGa1-xAs/GaAs layers and subsequent spatial ordering of InAs QDs were investigated. Photoluminescence (PL) and time-resolved PL was used to study the effects of increased QD positional ordering, increased QD uniformity, and their proximity to dislocation arrays on their optical properties. Narrower inhomogeneous PL broadening from the QDs ordered on dislocation arrays were observed, and differences in PL dynamics were found. (C) 2002 American Institute of Physics.

引用

页码：5826 / 5830

页数：5

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