Mechanism of nonalloyed Al ohmic contacts to n-type ZnO:Al epitaxial layer

被引：48

作者：

Kim, HK

Seong, TY

Kim, KK

Park, SJ

Yoon, YS

Adesida, I

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[2] Univ Illinois, Micro & Nanotechnol Lab, Urbana, IL 61801 USA

[3] Korea Inst Sci & Technol, Nano Mat Res Ctr, Seoul 130650, South Korea

[4] Korea Inst Sci & Technol, Micro Cell Lab, Seoul 130650, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2004年 / 43卷 / 03期

关键词：

ohmic contact; ZnO; specific contact resistivity; interfacial reaction; auger electron spectroscopy; x-ray photoelectron spectroscopy;

D O I：

10.1143/JJAP.43.976

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mechanism of Al ohmic contacts to n-type zinc oxide (ZnO:Al) epitaxial layer was investigated. The formation of an Al-ZnO interfacial phase at room temperature was responsible for the low specific resistivity (8 +/- 0.3 x 10(-4) Omegacm(2)). The results of Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) depth profiles, and glancing angle X-ray diffraction (GXRD) indicate that an interfacial reaction between Al and ZnO results in an increased doping concentration in the region of the ZnO surface resulting in a low specific contact resistivity without the need for a thermal annealing process.

引用

页码：976 / 979

页数：4

共 25 条

[1] Nonalloy Ohmic contact fabrication in a hydrothermally grown n-ZnO (0001) substrate by KrF excimer laser irradiation [J].