Surface characterization of transparent conductive oxide Al-doped ZnO films

被引：252

作者：

Chen, M ^{[1
]}

Pei, ZL

Sun, C

Wen, LS

Wang, X

机构：

[1] Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China

[2] Acad Sinica, Inst Met Res, Shenyang 110015, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 220卷 / 03期

关键词：

Al-doped ZnO (ZAO); spatial distribution; XPS; Al-enrichment;

D O I：

10.1016/S0022-0248(00)00834-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High preferred (002) orientation Al-doped ZnO (ZAO) films were prepared by DC magnetron reactive sputtering from a Zn target mixed with Al of 2.0wt%. The dependence of spatial distributions of resistivity on substrate temperature indicates that the spatial distribution of resistivity across substrate placed parallel to the target was improved by increasing substrate temperature. XPS analysis indicates Al-enrichment on the film surface. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：254 / 262

页数：9

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