Chemisorption Reaction Mechanisms for Atomic Layer Deposition of High-κ Oxides on High Mobility Channels

被引：8

作者：

Delabie, A. ^{[1
]}

Sioncke, S. ^{[1
]}

Van Elshocht, S. ^{[1
]}

Caymax, M. ^{[1
]}

Pourtois, G. ^{[1
]}

Pierloot, K. ^{[2
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Louvain, Belgium

[2] Dept Chem, K U Leuven, B-3001 B- Leuven, Belgium

来源：

ATOMIC LAYER DEPOSITION APPLICATIONS 6 | 2010年 / 33卷 / 02期

关键词：

SURFACE-REACTIONS; ALUMINUM-OXIDE; GE(100); AL2O3; HFO2;

D O I：

10.1149/1.3485270

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

For next generation CMOS technology nodes, new channel materials, such as Ge and III/V semiconductors, are investigated because of their higher intrinsic carrier mobility as compared to Si. In this work, we have studied the chemisorption reaction mechanisms for Atomic Layer Deposition (ALD) of the high-kappa dielectric Al2O3 on S-passivated Ge by means of ab initio calculations. The calculations provide insight into the specific interactions occurring during gate stack formation and the character of the bonds at the Ge interface.

引用

页码：343 / 353

页数：11

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