D- centers probed by resonant tunneling spectroscopy

被引：42

作者：

Lok, JGS

Geim, AK

Maan, JC

Marmorkos, I

Peeters, FM

Mori, N

Eaves, L

Foster, TJ

Main, PC

Sakai, JW

Henini, M

机构：

[1] UNIV ANTWERP, DEPT PHYS, B-2610 ANTWERP, BELGIUM

[2] UNIV NOTTINGHAM, DEPT PHYS, NOTTINGHAM NG7 2RD, ENGLAND

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.53.9554

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A donor-related resonance is observed in double-barrier resonant tunneling devices with Si donors incorporated in the quantum well. In high magnetic fields the resonance becomes dominant over the Is resonance associated with the ground state of a single donor. The bias position of the donor resonance, its magnetic field dependence, and large amplitude indicate unambiguously that the resonance is due to tunneling through the ground state of a shallow donor with two bound electrons (D- level).

引用

收藏

页码：9554 / 9557

页数：4

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