D- centers probed by resonant tunneling spectroscopy

被引:42
作者
Lok, JGS
Geim, AK
Maan, JC
Marmorkos, I
Peeters, FM
Mori, N
Eaves, L
Foster, TJ
Main, PC
Sakai, JW
Henini, M
机构
[1] UNIV ANTWERP, DEPT PHYS, B-2610 ANTWERP, BELGIUM
[2] UNIV NOTTINGHAM, DEPT PHYS, NOTTINGHAM NG7 2RD, ENGLAND
关键词
D O I
10.1103/PhysRevB.53.9554
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A donor-related resonance is observed in double-barrier resonant tunneling devices with Si donors incorporated in the quantum well. In high magnetic fields the resonance becomes dominant over the Is resonance associated with the ground state of a single donor. The bias position of the donor resonance, its magnetic field dependence, and large amplitude indicate unambiguously that the resonance is due to tunneling through the ground state of a shallow donor with two bound electrons (D- level).
引用
收藏
页码:9554 / 9557
页数:4
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