On the origin of efficiency roll-off in InGaN-based light-emitting diodes

被引：66

作者：

Cao, X. A. ^{[1
]}

Yang, Y. ^{[1
]}

Guo, H. ^{[1
]}

机构：

[1] W Virginia Univ, Dept Comp Sci & Elect Engn, Morgantown, WV 26506 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 09期

关键词：

D O I：

10.1063/1.3009967

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The external quantum efficiency (EQE) of AlInGaN-based light-emitting diodes (LEDs) on sapphire and bulk GaN substrates was measured over a wide range of pulsed currents with small duty cycles. The current dependence of the EQE appeared to be a strong function of the In content but nearly independent of the dislocation density in the active region. The EQE of the InGaN LEDs peaked at very low currents and decreased dramatically at high currents, whereas the AlGaN UV LED attained a saturated EQE as current increases. In contrast to minimal peak shift in the UV LED, a monotonic current-induced blueshift of the peak energy was seen up to 1 kA/cm(2) for the InGaN blue and green LEDs. These results suggest that the capture of delocalized carriers by nonradiative recombination centers such as misfit defects is the major nonthermal mechanism of efficiency roll-off in InGaN LEDs. (c) 2008 American Institute of Physics. [DOI:10.1063/1.3009967]

引用

页数：4

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