Fully-screened polarization-induced electric fields in blue/violet InGaN/GaN light-emitting devices grown on bulk GaN

被引：41

作者：

Franssen, G

Suski, T

Perlin, P

Bohdan, R

Bercha, A

Trzeciakowski, W

Makarowa, I

Prystawko, P

Leszczynski, M

Grzegory, I

Porowski, S

Kokenyesi, S

机构：

[1] Polish Acad Sci, Inst High Pressure Phys Unipress, PL-01142 Warsaw, Poland

[2] Univ Debrecen, H-4010 Debrecen, Hungary

[3] Poland & Uzhgorod Natl Univ, UA-88000 Uzhgorod, Ukraine

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 04期

关键词：

D O I：

10.1063/1.2000331

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photocurrent spectroscopy and hydrostatic-pressure-dependent electroluminescence are used to show that heavy 1x10(19) cm(-3) Si doping of quantum barriers is sufficient to achieve full screening of polarization-induced electric fields (PIEFs) in nitride light emitting diodes (LEDs) and laser diodes (LDs) with InGaN quantum wells. Furthermore, it is shown that at currents close to lasing threshold in nitride LDs injected charge alone is sufficient to achieve full screening of PIEFs. In contrast, full screening at low currents can only be accomplished via Si doping of quantum barriers. (c) 2005 American Institute of Physics.

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页数：3

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