Comparison of Si doping effect in optical properties of GaN epilayers and InxGa1-xN quantum wells

被引：24

作者：

Oh, E ^{[1
]}

Sone, C ^{[1
]}

Nam, O ^{[1
]}

Park, H ^{[1
]}

Park, Y ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Photon Lab, Suwon 440600, South Korea

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 22期

关键词：

D O I：

10.1063/1.126594

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Micro-photoluminescence (PL) spectra of Si-doped GaN epilayers and three-period In0.1Ga0.9N/In0.02Ga0.98N:Si quantum-well (QW) structures were studied and compared with macro-PL spectra. The shift of the macro-PL peak with increasing Si concentration was found to be similar to that with increasing excitation density in both GaN:Si and InxGa1-xN QWs. Also, it was observed that the macro-PL intensity increased with increasing Si concentration in GaN:Si and InxGa1-xN QWs, but the micro-PL intensity was independent of doping concentration. These results indicate that the changes of PL spectra with Si doping are mainly due to the increase of carriers. (C) 2000 American Institute of Physics. [S0003-6951(00)02721-2].

引用

页码：3242 / 3244

页数：3

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