Intra- and interwell transitions in GaInN/GaN multiple quantum wells with built-in piezoelectric fields

被引：63

作者：

Kollmer, H ^{[1
]}

Im, JS ^{[1
]}

Heppel, S ^{[1
]}

Off, J ^{[1
]}

Scholz, F ^{[1
]}

Hangleiter, A ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 01期

关键词：

D O I：

10.1063/1.122958

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied optical transitions in GaInN/GaN single and multiple quantum wells using time-resolved photoluminescence spectroscopy. Our results show that the energy positions of the dominant emission lines strongly depend both on the well width and on the number of wells. In the case of multiple quantum wells, time-resolved measurements clearly distinguish multiple emission lines. These observations are consistently explained by considering the large built-in piezoelectric field in strained GaInN quantum wells. The multiple emission lines are attributed to intra- and interwell transitions between nearest and next-nearest neighbors. (C) 1999 American Institute of Physics. [S0003-6951(99)00501-X].

引用

页码：82 / 84

页数：3

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