Researchers vie to achieve a quantum-dot laser

被引：28

作者：

Levi, BG

机构：

来源：

PHYSICS TODAY | 1996年 / 49卷 / 05期

关键词：

D O I：

10.1063/1.2807611

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

[No abstract available]

引用

页码：22 / 24

页数：3

共 15 条

[1] InAs-GaAs quantum dots: From growth to lasers [J].

Bimberg, D ;

Ledentsov, NN ;

Grundmann, M ;

Kirstaedter, N ;

Schmidt, OG ;

Mao, MH ;

Ustinov, VM ;

Egorov, AY ;

Zhukov, AE ;

Kopev, PS ;

Alferov, ZI ;

Ruvimov, SS ;

Gosele, U ;

Heydenreich, J .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1996, 194 (01) :159-173

[2]

DREXLER H, 1994, APPL PHYS LETT, V66, P1767

[3] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].

EAGLESHAM, DJ ;

CERULLO, M .

PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946

[4] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

GOLDSTEIN, L ;

GLAS, F ;

MARZIN, JY ;

CHARASSE, MN ;

LEROUX, G .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1099-1101

[5] ULTRANARROW LUMINESCENCE LINES FROM SINGLE QUANTUM DOTS [J].

GRUNDMANN, M ;

CHRISTEN, J ;

LEDENTSOV, NN ;

BOHRER, J ;

BIMBERG, D ;

RUVIMOV, SS ;

WERNER, P ;

RICHTER, U ;

GOSELE, U ;

HEYDENREICH, J ;

USTINOV, VM ;

EGOROV, AY ;

ZHUKOV, AE ;

KOPEV, PS ;

ALFEROV, ZI .

PHYSICAL REVIEW LETTERS, 1995, 74 (20) :4043-4046

[6] ONSET OF INCOHERENCY AND DEFECT INTRODUCTION IN THE INITIAL-STAGES OF MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGHLY STRAINED INXGA1-XAS ON GAAS(100) [J].

GUHA, S ;

MADHUKAR, A ;

RAJKUMAR, KC .

APPLIED PHYSICS LETTERS, 1990, 57 (20) :2110-2112

[7]

KIRSTAEDTER N, 1995, IEEE PHOTONIC TECH L, V7, P1385

[8]

KURTENBACH A, 1995, NATO ASI SERIES E, V298, P59

[9] SPATIALLY-RESOLVED VISIBLE LUMINESCENCE OF SELF-ASSEMBLED SEMICONDUCTOR QUANTUM DOTS [J].

LEON, R ;

PETROFF, PM ;

LEONARD, D ;

FAFARD, S .

SCIENCE, 1995, 267 (5206) :1966-1968

[10] PHOTOLUMINESCENCE OF SINGLE INAS QUANTUM DOTS OBTAINED BY SELF-ORGANIZED GROWTH ON GAAS [J].

MARZIN, JY ;

GERARD, JM ;

IZRAEL, A ;

BARRIER, D ;

BASTARD, G .

PHYSICAL REVIEW LETTERS, 1994, 73 (05) :716-719

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