Resist line edge roughness and aerial image contrast

被引:110
作者
Shin, J
Han, G
Ma, Y
Moloni, K
Cerrina, F [1 ]
机构
[1] Univ Wisconsin, Madison, WI 53719 USA
[2] Piezomax Technol, Madison, WI 53719 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 06期
关键词
D O I
10.1116/1.1418413
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report the results of an experimental study of the correlations between line edge roughness (LER) and aerial image contrast for different lithographies in identical processing conditions. The characterization has been performed using atomic force microscopy carbon nanotube tips to image the top and bottom of trenches with very high resolution. Experimental results generally support that higher aerial image contrast leads to lower line edge roughness, but differences exist among the lithographies and resists. Top surface roughness results show similar trends with LER. Higher aerial image modulation also yields higher resist sidewall angle. (C) 2001 American Vacuum Society.
引用
收藏
页码:2890 / 2895
页数:6
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