共 25 条
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CALCULATED ATOMIC STRUCTURES AND ELECTRONIC-PROPERTIES OF GAP, INP, GAAS, AND INAS (110) SURFACES
[J].
PHYSICAL REVIEW B,
1991, 44 (12)
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[3]
DIRECT DETERMINATION OF III-V SEMICONDUCTOR SURFACE BAND-GAPS
[J].
PHYSICAL REVIEW B,
1990, 41 (14)
:9880-9885
[4]
(110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS
[J].
PHYSICAL REVIEW B,
1979, 19 (04)
:2074-2082
[7]
FORMATION OF ANION VACANCIES BY LANGMUIR EVAPORATION FROM INP(110) AND GAAS(110) SURFACES AT LOW-TEMPERATURES
[J].
PHYSICAL REVIEW B,
1995, 51 (15)
:9696-9701
[8]
ATOM-SELECTIVE IMAGING OF THE GAAS(110) SURFACE
[J].
PHYSICAL REVIEW LETTERS,
1987, 58 (12)
:1192-1195
[9]
TUNNELING SPECTROSCOPY OF THE (110)-SURFACE OF DIRECT-GAP III-V SEMICONDUCTORS
[J].
PHYSICAL REVIEW B,
1994, 50 (07)
:4561-4570
[10]
TUNNELING SPECTROSCOPY OF THE GAAS(110) SURFACE
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1987, 5 (04)
:923-929