Leakage currents in high-quality pulsed-laser deposited aluminum nitride on 6H silicon carbide from 25 to 450 °C

被引：14

作者：

Scozzie, CJ ^{[1
]}

Lelis, AJ

McLean, FB

Vispute, RD

Choopun, S

Patel, A

Sharma, RP

Venkatesan, T

机构：

[1] USA, Res Lab, Adelphi, MD 20783 USA

[2] Univ Maryland, Dept Phys, Ctr Superconduct Res, College Pk, MD 20740 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 07期

关键词：

D O I：

10.1063/1.371329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The high-temperature dielectric properties of thin-film AlN that were pulsed-laser deposited on a heavily doped n-type 6H-SiC substrate are investigated from 25 to 450 degrees C. Capacitor leakage current densities of low 10(-8) A/cm(2) at 25 degrees C and mid 10(-3) A/cm(2) at 450 degrees C are reported for a 1.7 MV/cm dielectric field. The primary high-temperature leakage mechanism appears to be Schottky emission with a zero-field barrier height of 1.76 eV. A dielectric strength in excess of 1.7 MV/cm at 450 degrees C is reported. (C) 1999 American Institute of Physics. [S0021-8979(99)07019-X].

引用

页码：4052 / 4054

页数：3

共 11 条

[1]

King SW, 1996, MATER RES SOC SYMP P, V395, P375

[2] ELECTRONIC-STRUCTURE AND BONDING AT SIC/ALN AND SIC/BP INTERFACES [J].