High temperature high dose C ion implantation in epitaxial SiGe

Si1-xGex epitaxial layers fully strained (x = 0.27) and relaxed (x = 0.55) have been implanted with C ions at 500 degrees C. Implantation energy and doses were selected to obtain the C peak in the central region of the SiGe layer, with a concentration similar to the Ge content. The implanted layers have been analyzed by Raman scattering, X-ray diffraction, transmission electron microscopy and secondary ion mass spectroscopy, The data obtained show the direct synthesis of beta-SIC precipitates aligned in relation to the SiGe lattice after the implantation, as well as a Ge enrichment and stress relaxation of the SiGe lattice. For the relaxed layer a significant Ge redistribution from the implanted region is observed.