Ion beam synthesis and recrystallization of amorphous SiGe/SiC structures

被引：2

作者：

PerezRodriguez, A

RomanoRodriguez, A

Serre, C

CalvoBarrio, L

Cabezas, R

Morante, JR

Calderer, J

Reuther, H

Skorupa, W

机构：

[1] UNIV POLITECN CATALUNYA,DEPT ELECT ENGN,ES-08034 BARCELONA,SPAIN

[2] ROSSENDORF INC,FORSCHUNGSZENTRUM ROSSENDORF EV,INST IONENSTRAHLPHYS & MAT FORSCH,D-01314 DRESDEN,GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 120卷 / 1-4期

关键词：

D O I：

10.1016/S0168-583X(96)00498-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Si1-xGex amorphous layers implanted with different doses of carbon (between 5 x 10(15) and 2 x 10(17) cm(-2)) and annealed at 700 degrees C and 900 degrees C have been analyzed by Raman and Infrared spectroscopies, electron microscopy and Auger electron spectroscopy, The obtained data show the synthesis of amorphous SiC by implanting at the highest doses. In these cases, recrystallization only occurs at the highest annealing temperature (900 degrees C). The structure of the synthesized SiC strongly depends on the implantation dose, in addition to the anneal temperature. For the highest dose (2 x 10(17) cm(-2)), crystalline beta-SiC is formed. Finally, a strong migration of Ge towards the Si substrate is observed from the region where SiC precipitation occurs.

引用

收藏

页码：151 / 155

页数：5

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