RAMAN-SPECTROSCOPY STUDY OF MICROSCOPIC STRAIN IN EPITAXIAL SI1-X-YGEXCY ALLOYS

被引：47

作者：

MENENDEZ, J

GOPALAN, P

SPENCER, GS

CAVE, N

STRANE, JW

机构：

[1] MOTOROLA INC,MAT CHARACTERIZAT LAB,MESA,AZ 85213

[2] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 10期

关键词：

D O I：

10.1063/1.113843

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper presents the result of a Raman scattering characterization of Si1-x-yGexCy layers. The main conclusion from this research is that the Si-Si bonds in strain-compensated Si1-x-yGexCy layers do not relax back to their pure Si configuration, even when the average lattice constant of the alloy is identical to that of pure Si.

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页码：1160 / 1162

页数：3

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