STRAIN SYMMETRIZATION EFFECTS IN PSEUDOMORPHIC SI1-YCY/SI1-XGEX SUPERLATTICES

被引：24

作者：

EBERL, K ^{[1
]}

IYER, SS ^{[1
]}

LEGOUES, FK ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 06期

关键词：

D O I：

10.1063/1.111051

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on strain and stability measurements on pseudomorphic Si1-yCy/Si1-xGex superlattices which are synthesized by solid source molecular beam epitaxy on silicon (100) substrate. The strain in the superlattices alternates between tensile and compressive in the individual Si1-yCy and Si1-xGex alloy layers, respectively. A symmetrical strain distribution can be achieved directly on silicon by adjusting the carbon and the germanium content and/or the thickness of the individual layers. X-ray diffraction and transmission electron microscopy are applied to investigate the structural properties and the thermal stability.

引用

页码：739 / 741

页数：3

共 11 条

[1] THE GROWTH AND CHARACTERIZATION OF SI1-YCY ALLOYS ON SI(001) SUBSTRATE
EBERL, K
IYER, SS
TSANG, JC
GOORSKY, MS
LEGOUES, FK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 934 - 936
[2] GROWTH AND STRAIN COMPENSATION EFFECTS IN THE TERNARY SI1-X-YGEXCY ALLOY SYSTEM
EBERL, K
IYER, SS
ZOLLNER, S
TSANG, JC
LEGOUES, FK
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (24) : 3033 - 3035
[3] THERMAL-STABILITY OF SI1-XCX/SI STRAINED LAYER SUPERLATTICES
GOORSKY, MS
IYER, SS
EBERL, K
LEGOUES, F
ANGILELLO, J
CARDONE, F
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (22) : 2758 - 2760
[4] STABILITY OF SEMICONDUCTOR STRAINED-LAYER SUPERLATTICES
HULL, R
BEAN, JC
CERDEIRA, F
FIORY, AT
GIBSON, JM
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (01) : 56 - 58
[5] IYER SS, 1991, MATER RES SOC SYMP P, V220, P581, DOI 10.1557/PROC-220-581
[6] IYER SS, 1992, APPL PHYS LETT, V60, P357
[7] SYMMETRICALLY STRAINED SI/GE SUPERLATTICES ON SI SUBSTRATES
KASPER, E
KIBBEL, H
JORKE, H
BRUGGER, H
FRIESS, E
ABSTREITER, G
[J]. PHYSICAL REVIEW B, 1988, 38 (05): : 3599 - 3601
[8] ANOMALOUS STRAIN RELAXATION IN SIGE THIN-FILMS AND SUPERLATTICES
LEGOUES, FK
MEYERSON, BS
MORAR, JF
[J]. PHYSICAL REVIEW LETTERS, 1991, 66 (22) : 2903 - 2906
[9] EXTREMELY HIGH ELECTRON-MOBILITY IN SI/GEXSI1-X STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
MII, YJ
XIE, YH
FITZGERALD, EA
MONROE, D
THIEL, FA
WEIR, BE
FELDMAN, LC
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (13) : 1611 - 1613
[10] POWELL AR, IN PRESS APPL PHYS L

← 1 2 →