Deposition of a-C:H films from argon/cyclohexane plasma on polymer substrates

被引：6

作者：

Fedoseev, DV

Tolmachev, YN

Varshavskaya, IG

Bukhovets, VL

机构：

[1] Institute of Physical Chemistry, Russian Academy of Sciences, Leninsky prospect 31, Moscow 117915, Russia

来源：

关键词：

a-C:H film; low-temperature plasma;

D O I：

10.1016/0925-9635(95)00405-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Growth of a-C:H films from cyclohexane-argon mixtures activated by glow discharge has been investigated. Deposition was performed on a polymer substrate under the 250 kHz electric field. Cyclohexane flow rate and ion flux onto the deposition surface have been found to be the main factors affecting the deposition rate, microhardness and the absorption coefficient in the blue spectral band.

引用

页码：429 / 432

页数：4

共 10 条

[1]

Angus J. C., 1991, Diamond and Related Materials, V1, P61, DOI 10.1016/0925-9635(91)90012-Y

[2] THIN-FILM DIAMOND GROWTH MECHANISMS [J].

BUTLER, JE ;

WOODIN, RL .

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1993, 342 (1664) :209-224

[3] ELECTRICAL CHARACTERISTICS AND GROWTH-KINETICS IN DISCHARGES USED FOR PLASMA DEPOSITION OF AMORPHOUS-CARBON [J].

CATHERINE, Y ;

COUDERC, P .

THIN SOLID FILMS, 1986, 144 (02) :265-280

[4]

FEDOSEEV DV, 1988, DOKL AKAD NAUK SSSR+, V300, P629

[5]

FEDOSEEV DV, UNPUB

[6] MONTE-CARLO SIMULATION OF DIAMOND GROWTH BY METHYL AND ACETYLENE REACTIONS [J].

FRENKLACH, M .

JOURNAL OF CHEMICAL PHYSICS, 1992, 97 (08) :5794-5802

[7]

KONDRATEV VN, 1968, KINETIKA KHIMICHESKI, P680

[8] RADIOFREQUENCY HOT-FILAMENT CVD OF DIAMOND [J].

MITURA, S .

[9] STRUCTURAL MODELS OF A-C AND A-C-H [J].

ROBERTSON, J .

[10] ELEMENTARY REACTION-MECHANISM FOR GROWTH OF DIAMOND(100) SURFACES FROM METHYL RADICALS [J].

SKOKOV, S ;

WEINER, B ;

FRENKLACH, M .

JOURNAL OF PHYSICAL CHEMISTRY, 1994, 98 (28) :7073-7082

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