MONTE-CARLO SIMULATION OF DIAMOND GROWTH BY METHYL AND ACETYLENE REACTIONS

被引:77
作者
FRENKLACH, M
机构
[1] Department of Materials Science and Engineering, Pennsylvania State University, University Park
关键词
D O I
10.1063/1.463738
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A dynamic Monte Carlo technique was applied to gas-surface reactions simulating diamond growth under chemical vapor deposition. A combined methyl-and-acetylene reaction mechanism was assumed, where the additions of methyl radicals and acetylene molecules are allowed to occur only when no steric interferences arise. The sterically resolved computations demonstrate nonlinear kinetic coupling: methyl and acetylene additions occur simultaneously and interdependently on each other-adsorption of CH3 Creates sites for C2H2 addition, and addition of C2H2 creates sites for CH3 adsorption. It is also shown that the incorporation of acetylene by three-center additions only, irreversible on physical grounds, is capable of explaining the rate of diamond growth, thus dismissing the argument of reaction reversibility advanced against our proposed mechanism of acetylene addition.
引用
收藏
页码:5794 / 5802
页数:9
相关论文
共 81 条
[1]   FREE-RADICALS WITHIN THE ANTARCTIC VORTEX - THE ROLE OF CFCS IN ANTARCTIC OZONE LOSS [J].
ANDERSON, JG ;
TOOHEY, DW ;
BRUNE, WH .
SCIENCE, 1991, 251 (4989) :39-46
[2]   LOW-PRESSURE, METASTABLE GROWTH OF DIAMOND AND DIAMONDLIKE PHASES [J].
ANGUS, JC ;
HAYMAN, CC .
SCIENCE, 1988, 241 (4868) :913-921
[3]  
[Anonymous], 1986, MONTE CARLO METHODS
[4]   A MATHEMATICAL-MODEL FOR CHEMICAL VAPOR-DEPOSITION PROCESSES INFLUENCED BY SURFACE-REACTION KINETICS - APPLICATION TO LOW-PRESSURE DEPOSITION OF TUNGSTEN [J].
ARORA, R ;
POLLARD, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (05) :1523-1537
[5]   A MECHANISM FOR GROWTH ON DIAMOND (110) FROM ACETYLENE [J].
BELTON, DN ;
HARRIS, SJ .
JOURNAL OF CHEMICAL PHYSICS, 1992, 96 (03) :2371-2377
[6]  
BELTON DN, 1991, 2ND P INT S DIAM MAT, P170
[7]  
Boudart M., 2014, KINETICS HETEROGENEO
[8]   DIAMOND CHEMICAL VAPOR-DEPOSITION [J].
CELII, FG ;
BUTLER, JE .
ANNUAL REVIEW OF PHYSICAL CHEMISTRY, 1991, 42 (01) :643-684
[9]   INFRARED DETECTION OF GASEOUS SPECIES DURING THE FILAMENT-ASSISTED GROWTH OF DIAMOND [J].
CELII, FG ;
PEHRSSON, PE ;
WANG, HT ;
BUTLER, JE .
APPLIED PHYSICS LETTERS, 1988, 52 (24) :2043-2045
[10]   MECHANISM OF DIAMOND FILM GROWTH BY HOT-FILAMENT CVD - C-13 STUDIES [J].
CHU, CJ ;
DEVELYN, MP ;
HAUGE, RH ;
MARGRAVE, JL .
JOURNAL OF MATERIALS RESEARCH, 1990, 5 (11) :2405-2413