Structural, electrical and optical properties of AgInS2 thin films grown by thermal evaporation method

被引:43
作者
Akaki, Y
Kurihara, S
Shirahama, M
Tsurugida, K
Seto, S
Kakeno, T
Yoshino, K
机构
[1] Miyagi Natl Coll Technol, Dept Elect Engn, Miyazaki 8858567, Japan
[2] Iskikawa Natl Coll Technol, Dept Elect Engn, Kahoku, Ishikawa 9290392, Japan
[3] Miyazaki Univ, Dept Elect & Elect Engn, Miyazaki 8892192, Japan
关键词
inorganic compounds; semiconductors; thin films; defects; electrical properties;
D O I
10.1016/j.jpcs.2005.09.005
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Structural electrical and optical properties of AgInS2 (AIS) thin films grown by the single-source thermal evaporation method were studied. The Xray diffraction spectra indicated that the AIS single phase was successful grown by annealing above 400 C in air. The AIS grain sizes became large with increasing the annealing temperatures. All polycrystalline AIS thin films were sulfur-poor from the electron probe microanalysis and indicated n-type conduction by the Van der Pauw technique. It was deduced that the sulfur vacancies were dominant in the films and enhanced n-type conduction. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1858 / 1861
页数:4
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