Structural and optical characterization of Sb-doped CuInS2 thin films grown by vacuum evaporation method

被引：38

作者：

Akaki, Y

Komaki, H

Yokoyama, H

Yoshino, K

Maeda, K

Ikari, T

机构：

[1] Miyakonojo Natl Coll Technol, Miyazaki 8858567, Japan

[2] Miyazaki Univ, Dept Elect & Elect Engn, Miyazaki 8892192, Japan

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2003年 / 64卷 / 9-10期

关键词：

X-ray diffraction;

D O I：

10.1016/S0022-3697(03)00249-X

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Structural, electrical and optical properties of Sb-doped CuInS2 thin films grown by single source thermal evaporation method were studied. The films were annealed from 100 to 500 degreesC in air after the evaporation. The X-ray diffraction spectra indicated that polycrystalline CuInS2 films were successfully obtained by annealing above 200 degreesC. This temperature was lower than that of non-doped CuInS2 films. Furthermore, We found that the Sb-doped CuInS2 thin films became close to stoichiometry in comparison with non-doped CuInS2 thin films. The Sb-doped samples annealed above 200 degreesC has bandgap, energy of 1.43-1.50 eV. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：1863 / 1867

页数：5

共 17 条

[1] Surface morphology of evaporated CuInS2 thin films grown by single source thermal evaporation technique [J].