Development of quantum functional devices for multiple-valued logic circuits

被引：9

作者：

Baba, T ^{[1
]}

机构：

[1] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 305, Japan

来源：

1999 29TH IEEE INTERNATIONAL SYMPOSIUM ON MULTIPLE-VALUED LOGIC, PROCEEDINGS | 1999年

关键词：

D O I：

10.1109/ISMVL.1999.779687

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Quantum functional devices exhibiting unique current-voltage characteristics are reported for the application of multiple-valued logic circuits. Multiple negative-differential-resistance (NDR) characteristics in drain current-voltage characteristics are demonstrated by using multiple-junction surface tunnel transistors (MJ-STTs). Some multiple-valued logic gates such as inverter and literal are implemented using the MJ-STTs. Oscillatory characteristics of drain current under gate modulation are shown by single electron transistors. Nonvolatile multiple-valued memory devices utilizing these unique characteristics are described, and the fundamental operation of write and read of stored electrons are demonstrated.

引用

页码：2 / 8

页数：7

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