A NEW RESONANT TUNNELING LOGIC GATE EMPLOYING MONOSTABLE-BISTABLE TRANSITION

被引:100
作者
MAEZAWA, K
MIZUTANI, T
机构
[1] NTT LSI Laboratories, Kanagawa, 243-01, 3-1 Morinosato Wakamiya, Atsugi-shi
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 1A-B期
关键词
RESONANT TUNNELING DIODE; LOGIC GATE; FANOUT; GAAS; ALAS; BISTABLE; JUNCTION FET;
D O I
10.1143/JJAP.32.L42
中图分类号
O59 [应用物理学];
学科分类号
摘要
This letter describes a new resonant tunneling logic gate. The concept of the proposed gate has two features: 1) to employ the monostable-to-bistable transition of a circuit consisting of two N-type negative differential resistance (NDR) devices connected serially, and 2) to drive the logic gate by oscillating the bias voltage to produce the transition. This mode of operation has a significant advantage in that a large number of fanouts is possible without sacrificing the high-speed operation. Serially connected resonant tunneling field effect transistors having p+-junction gates were fabricated to test the above operation principle. The inverter operation of the proposed logic gate has been successfully achieved at room temperature.
引用
收藏
页码:L42 / L44
页数:3
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