Semiconductor materials and radiation detection

被引:121
作者
Owens, A [1 ]
机构
[1] European Space Agcy, Estec, Sci Payload & Adv Concepts Off, SCI AT, NL-2200 AG Noordwijk, Netherlands
关键词
compound semiconductors; radiation detectors; X-rays; gamma-rays;
D O I
10.1107/S0909049505033339
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
While Si and Ge have become detection standards for X-ray and gamma-ray spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by one or more of their physical limitations; namely the need for ancillary cooling systems or bulky cryogenics, their modest stopping powers and radiation intolerance. Wide band-gap compounds offer the ability to operate in a range of chemical, thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. In addition, these materials encompass such a wide range of physical properties that it is technically feasible to engineer materials to specific applications. However, while compound materials are used routinely in the optical and infrared wave bands, their development at hard X-and gamma-ray wavelengths has been plagued by material and fabrication problems. In this paper an overview of suitable materials is presented and the current progress in producing X-and gamma-ray radiation detectors is reviewed.
引用
收藏
页码:143 / 150
页数:8
相关论文
共 26 条
[1]   CHARGE-TRANSPORT IN ARRAYS OF SEMICONDUCTOR GAMMA-RAY DETECTORS [J].
BARRETT, HH ;
ESKIN, JD ;
BARBER, HB .
PHYSICAL REVIEW LETTERS, 1995, 75 (01) :156-159
[2]  
Bertuccio G, 2002, MATER SCI FORUM, V433-4, P941, DOI 10.4028/www.scientific.net/MSF.433-436.941
[3]   Epitaxial silicon carbide for X-ray detection [J].
Bertuccio, G ;
Casiraghi, R ;
Nava, F .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2001, 48 (02) :232-233
[4]   For the mechanism of the photoelectric primary current in insulating crystals. [J].
Hecht, Karl .
ZEITSCHRIFT FUR PHYSIK, 1932, 77 (3-4) :235-245
[5]   TRAPPING EFFECTS IN GE(LI) DETECTORS AND SEARCH FOR A CORRELATION WITH CHARACTERISTICS MEASURED ON P-TYPE CRYSTALS [J].
HENCK, R ;
GUTKNECHT, D ;
SIFFERT, P ;
DELAET, L ;
SCHOENMAEKERS, W .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1970, NS17 (03) :149-+
[6]   THE EFFECT OF CHARGE TRAPPING ON THE SPECTROMETRIC PERFORMANCE OF HGI2 GAMMA-RAY DETECTORS [J].
IWANCZYK, JS ;
SCHNEPPLE, WF ;
MASTERSON, MJ .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1992, 322 (03) :421-426
[7]   PERFORMANCE AND DURABILITY OF HGI2 X-RAY-DETECTORS FOR SPACE MISSIONS [J].
IWANCZYK, JS ;
WANG, YJ ;
BRADLEY, JG ;
CONLEY, JM ;
ALBEE, AL ;
ECONOMOU, TE .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1989, 36 (01) :841-845
[8]   Compact circuit for pulse rise-time discrimination [J].
Jordanov, VT ;
Pantazis, JA ;
Huber, AC .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1996, 380 (1-2) :353-357
[9]   Resolution degradation of semiconductor detectors due to carrier trapping [J].
Kozorezov, AG ;
Wigmore, JK ;
Owens, A ;
den Hartog, R ;
Peacock, A ;
Al-Jawhari, HA .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2005, 546 (1-2) :209-212
[10]   X-ray Peltier cooled detectors for X-ray fluorescence analysis [J].
Loupilov, A ;
Sokolov, A ;
Gostilo, V .
RADIATION PHYSICS AND CHEMISTRY, 2001, 61 (3-6) :463-464